Denis Vasyukov

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DENIS VASYUKOV

School of Physics, University of Exeter
Stocker Road, EX4 4QL
Exeter, Devon, UK
+44 1392 264 176
106, Bonhay Road
EX4 4BH, Exeter
Devon, UK
+44 770 433 9424

dv202@ex.ac.uk
denis.vasyukov@googlemail.com

PROFILE

Experienced and skilled experimentalist, able to work with various scientific equipment. Capable to design a new experiment starting from the sample design and fabrication and following by the sample characterization, experiment setup design (involving mechanical parts design and fabrication), electronic part design and fabrication and experiment automation (software coding). Able to analyze the present data, develop and improve an existing experiment (experimental setup).
Key characteristics - creative, adaptive, fast to learn.

EDUCATION

Oct. 2005 - present:

PhD student at School of Physics, University of Exeter (Exeter, UK)
Thesis: Optically Induced Anomalous Hall Effect in 2D hole gas.
Research supervisor: Dr. Annette S. Plaut
Research objectives:
  • To find an experimental evidence for the theoretically predicted Spin Hall effect in zinc-blende semiconductors and characterize it's behaviour with respect to different experimental parameters.
  • Explain the obtained experimental data.
Awarded by ORSAS scholarship to study.

Sep. 1999 - Jul. 2001:

Masters Degree in Physics, St.Petersburg State Technical University, Physical and Technical Faculty. (St.Petersburg, Russia)
Thesis: Structural Investigation of Isovalent Doped GaAs Grown at Low Temperature.
Research supervisor: Prof. Semen G. Konnikov (the head of the Laboratory of material characterization)

The work has been done in Ioffe Physico-Technical Institute of the Russian Academy of Science, Laboratory of characterization of materials and solid state electronics structures. Ioffe Institute is the largest semiconductor physics R&D institution in Russia and is regarded as the Alma Mater for many leading specialists in the field, including it's former head Prof. Zhores I. Alferov a Nobel Prize winner in Physics of year 2000 (for his contribution in the development of semiconductor heterostructures and lasers).

Research objectives:
  • To investigate the structural properties of nonstoichiometric III-V semiconductors using X-ray diffraction and transmission electron microscopy techniques.
  • Theoretically explain and simulate obtained experimental results using mathematical software.
Studied: Physics of semiconductor devices with the main focus on optoelectronics devices; device and semiconductor materials characterization.
Awarded: A.F. Ioffe Young Scientist scholarship,International Union of Crystallography Young Scientist Award

Sep. 1994 - Jul. 1999:

Bachelors Degree in Physics, St.Petersburg State Technical University, Physical and Technical Faculty. (St.Petersburg, Russia)
Thesis: Determination of growth parameters and crystalline quality of quaternary solid solutions using high-resolution X-ray diffractometry.
Research supervisor: Dr. Marina V. Baidakova

That work also has been done in Ioffe Physico-Technical Institute of the Russian Academy of Science, Laboratory of characterization of materials and solid state electronics structures.

Research objectives: To find out how the growth temperature and the liquid phase elements ratio influence the structural properties of ternary III-V semiconductors using X-ray diffraction photoluminescence techniques.
Studied: Physics and mathematical sciences, electrical engineering, programming and technical drawing.



PROFESSIONAL EXPERIENCE

Oct. 2005 - present:

PhD student, School of Physics, University of Exeter, Exeter, UK
Research topic: Optically Induced Anomalous Hall Effect in 2D hole gas
Duties: Measurement automation (LabView software writing), research, experimental measurements (magneto-transport, optical and combined).

Jun. 2006:

research adviser, Nano System Functionality Centre (Nano Quantum Electronics Group), National Institute of Material Science, Tsukuba, Japan
Duties: Creation of measurement automation software, using LabView, and a small parts of electronic equipment.

Aug. 2004 - Sep. 2005:

device characterization engineer, "Epi-center" Ltd., St.Petersburg, Russia
Work essentials: LED structures characterization.
Duties: Creation of quick-test measurement laboratory for blue (nitrides based) LED structure and electronic properties characterization (X-ray diffration, photo- and electro-luminescence, ellipsometry, I-V measurements). Measurement data processing software writing (LabView, C#). Rutine measurements. Equipment maintenance.

Jan. 2002 - May 2004:

invited researcher, Physikalishes Institut III, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany
Research topic: Microwave properties of stacked intrinsic Josephson junctions.
Duties: Submicron size sample preparation (photo + e-beam lithography, material deposition techniques, various types of etching, bonding), experimental setup design and partial fabrication (3D-moving stage for the cryostat probe and microwave lens design), experiment measurement and control software writing (LabView and C++), equipment maintenance.

May 1999 - Dec. 2001:

senior laboratory assistant, Ioffe Institute of the Russian Academy of Sciences, St. Petersburg, Russia
Research topic: X-ray diffraction measurements of semiconductor heterostructures.
Duties: X-ray diffraction measurements of crystal samples, calculations to define crystal parameters, equipment maintenance.



PUBLICATIONS

  • The circular photogalvanic effect in two-dimensional hole gases in magnetic field. D.A. Vasyukov, A.S. Plaut, A.H. MacDonald, M. Henini, to be published
  • Photo-induced anomalous Hall effect in 2-dimensional hole gases. D.A. Vasyukov, A.S. Plaut, A.H. MacDonald, M. Henini, L.N. Pfeiffer, K.W. West, to be published
  • Thermal fluctuations in ultrasmall intrinsic Josephson junctions. A.Franz, Y.Koval, D.Vasyukov, P.Mueller, H.Schneidewind, D.A.Ryndyk and J.Keller, C.Helm, Phys. Rev. B 69 (2004) 014506
  • Intrinsic Josephson junctions: integrated circuits and possible applications. Huabing Wang, Jian Chen, Peiheng Wu, Tsutomu Yamashita, Denis Vasyukov and Paul Mueller, Supercond. Sci. Technol. 16 (2003) 1375-1379
  • The role of lead in growing GaInAsSb solid solutions by LPE. T.I.Voronina, T.S.Lagunova, E.V.Kunitsyna, Ya.A.Parkhomenko, D.A.Vasyukov, Yu.P.Yakovlev, Semiconductors 35 (8) (2001) 904-911
  • Structural transformations in low-temperature grown GaAs:Sb. D.A.Vasyukov, M.V.Baidakova, V.V.Chaldyshev, A.A.Suvorova, V.V.Preobrazhenskii, M.A.Putyato and B.R.Semyagin, J.Phys.D:Appl.Phys. 34 (2001) A15-A18

PRESENTATIONS

  • The circular photogalvanic effect in two-dimensional hole gases in magnetic field. D.A. Vasyukov, A.S. Plaut, A.H. MacDonald, M. Henini, HMF18 (2008), Brazil
  • Photo-induced anomalous Hall effect in 2-dimensional hole gases. D.A. Vasyukov, A.S. Plaut, A.H. MacDonald, M. Henini, L.N. Pfeiffer, K.W. West, ICPS 2008, Brazil
  • Microwave absorption of BSCCO based intrinsic Josephson junctions. D.Vasyukov, H.B.Wang, V.Dremov, Y.Koval, P.Mueller, Cryo'03 Kryoelektronische Bauelemente 2003, Heinrich - Fabri - Institut, Blaubeuren, Germany, 5-7.10.2003
  • Hydrogenation of GaAs films at low temperature. V.V.Chaldyshev, A.E.Kunitsyn, D.A.Vasyukov, V.A.Kagadei, D.I.Proskurovsky, V.V.Preobrazhenskii, M.A. Putyato, and B.R. Semyagin, 3rd Symposium on Non Stochiometric III-V-Compounds 2001, Germany
  • Epitaxial growth of heterostructures based on InAsPSb and GaInAsPSb isoperiodical with GaSb. V.I.Vasil'ev, V.I.Kuchinskii, I.P.Nikitina, D.Akhmedov, V.M.Smirnov, D.A.Vasyukov, ISCS 2000, Hyatt Monterey, Monterey, CA, USA
  • Structural Transformations in Low-Temperature-Grown GaAs. D.A.Vasyukov, M.V.Baidakova, V.V.Chaldyshev, A.A.Suvorova, V.V.Preobrazhenskii, M.A.Putyato, B.R.Semyagin, XTOP2000, Poland
  • HRXRD and TEM Studies of delta-InAs and As-Cluster Superlattices in GaAs Grown at Low Temperature. D.A.Vasyukov, V.V.Chaldyshev, A.A.Suvorova, V.V.Preobrazhenskii, M.A.Putyato, B.R.Semyagin, N.N.Faleev, XTOP2000, Poland
  • Influence of Antimony Doping on Structural Transformations in Low-Temperature-Grown GaAs upon Annealing. D.A.Vasyukov, V.V.Chaldyshev, A.A.Suvorova, V.V.Preobrazhenskii, M.A.Putyato, B.R.Semyagin CAC2000, Poland
  • High-Resolution X-ray Diffraction Study of Coincided delta-InAs and As-Cluster Superlattices in GaAs Films Grown by Molecular Beam Epitaxy at Low Temperature. D.A.Vasyukov, V.V.Chaldyshev, N.N.Faleev, A.A.Suvorova, V.V.Preobrazhenskii, M.A.Putyato, B.R.Semyagin, CAC2000, Poland

PERSONAL

Date of Birth: August 03, 1977
Citizenship: Russian
Languages: English - fluent, Russian - native speaker, German - basic knowledge

HOBBIES

I enjoy having fun when I'm not busy in the laboratory. I do swimming a lot, when I was at school I was swimming for the city team, although I'm not in a team anymore, I didn't give up this sport and swim regularly. Recently I have extended my water experience receiving PADI Open Water Diver certificate, so now diving is also my hobby, which I plan to upgrade (money and time allowing) to the Dive Master level. My other hobby is photography - you might wish to look at my gallery there are some decent photos. Photografy is also to be expanded to the underwater places, because there is so much interesting to see.

Apart from that, I often cycle during weekends to explore the neighbourhood or the cities nearby. Movies and good music also help to kill some time during rainy evenings. And I travel a lot. I like to explore different cultures and languages and meeting different kinds of people.

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